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Gallium arsenide (GaAs) and gallium phosphide (GaP) both have th

Gallium arsenide (GaAs) and gallium phosphide (GaP) both have th

Gallium arsenide (GaAs) and gallium phosphide (GaP) both have the zinc blende crystal structure and are soluble in one another at all concentrations. Determine the concentration in weight percent of GaP that must be added to GaAs to yield a unit cell edge length of 0.5570 nm. The densities of GaAs and GaP are 5.316 and 4.130 g/cm3, respectively.

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